8N60 datasheet, 8N60 datasheets, 8N60 pdf, 8N60 circuit: UTC - 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET,alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. N-Channel MOSFET 600V, 8A, 1.0 (ohm) MDF8N60 Datasheet (HTML) - MagnaChip Semiconductor. 8N60 Power MOSFET 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is. All Transistors Datasheet. Cross Reference Search. Transistor Database.
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Transistor Mosfet 8n60
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Fqpf8n60c Mosfet
8n60 Mosfet Equivalent
| Номер произв | 8N60 | ||||
| Описание | N-CHANNEL POWER MOSFET | ||||
| Производители | Unisonic Technologies | ||||
| логотип | |||||
1Page
8N60 POWER MOSFET The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters FEATURES * Ultra low gate charge ( typical 28 nC ) * Low reverse transfer capacitance ( CRSS = typical 12.0 pF ) * Avalanche energy specified SYMBOL ORDERING INFORMATION Ordering Number Halogen Free 8N60G-TA3-T 8N60G-TF1-T 8N60G-TF2-T 8N60G-TF3-T 8N60G-T2Q-T Package TO-220F1 TO-220F Pin Assignment GDS GDS GDS Tube Tube Tube Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-115.G
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Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) SYMBOL UNIT Gate-Source Voltage VGSS ±30 V Drain Current Pulsed (Note 2) Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) ID EAS dv/dt 8A 230 mJ 4.5 V/ns 147 W TO-220F/TO-220F1 48 W 50 W TJ °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 3. L = 7.1mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤7.5A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C PARAMETER TO-220/TO-262 TO-220F/TO-220F1 SYMBOL θJC 62.5 2.6 UNIT °C/W °C/W www.unisonic.com.tw QW-R502-115.G | |||||
| Всего страниц | 9 Pages | ||||
| Скачать PDF | [ 8N60.PDF Даташит ] | ||||